Quantum Anomalous Hall Effect Research Articles

Stacking model of a three-dimensional second-order topological insulator manifesting quantum anomalous Hall effect

Stacking model of a three-dimensional second-order topological insulator manifesting quantum anomalous Hall effect

Large quantum anomalous Hall effect in spin-orbit proximitized rhombohedral graphene

The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon that features quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene-monolayer tungsten disulfide (WS 2 ) heterostructure. Distinct from other experimentally confirmed QAHE systems, this system has neither magnetic element nor moiré superlattice effect. The QAH states emerge at charge neutrality and feature Chern numbers C = ±5 at temperatures of up to about 1.5 kelvin. This large QAHE arises from the synergy of the electron correlation in intrinsic flat bands of pentalayer graphene, the gate-tuning effect, and the proximity-induced Ising spin-orbit coupling. Our experiment demonstrates the potential of crystalline two-dimensional materials for intertwined electron correlation and band topology physics and may enable a route for engineering chiral Majorana edge states.

Assembly-inspired multiferroicity with nontrivial Chern insulating phase from exohedral metallofullerenes.

Fullerene-assembled low-dimensional materials have been experimentally realized in polymorphic forms and have attracted significant interest very recently. Here, we predict a two-dimensional (2D) honeycomb lattice material TM2(C60)3 (TM = Cr, Mo, and W) assembled from exohedral metallofullerene clusters TM(C60)3 that could exhibit planar triangular geometries. According to first-principles calculations combined with Monte Carlo simulations, we suggest that these 2D assembled materials exhibit various exotic physical properties, including ferromagnetism, ferroelectricity, and quantum anomalous Hall effect. Interestingly, mechanical strains could effectively tune their magnetic moments and switch the conducting spin channel of the Dirac bands at the Fermi level. Our work provides a new cluster-assembly design strategy toward cluster-assembled 2D materials based on fullerene characters.

Atomic scale quantum anomalous hall effect in monolayer graphene/MnBi2Te4 heterostructure.

The two-dimensional quantum anomalous Hall (QAH) effect is direct evidence of non-trivial Berry curvature topology in condensed matter physics. Searching for QAH in 2D materials, particularly with simplified fabrication methods, poses a significant challenge in future applications. Despite numerous theoretical works proposed for the QAH effect with C = 2 in graphene, neglecting magnetism sources such as proper substrate effects lacks experimental evidence. In this work, we propose the QAH effect in graphene/MnBi2Te4 (MBT) heterostructure based on density-functional theory (DFT) calculations. The monolayer MBT introduces spin-orbital coupling, Zeeman exchange field, and Kekulé distortion as a substrate effect into graphene, resulting in QAH with C = 1 in the heterostructure. Our effective Hamiltonian further presents a rich phase diagram that has not been studied previously. Our work provides a new and practical way to explore the QAH effect in monolayer graphene and the magnetic topological phases by the flexibility of MBT family materials.

The Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-temperature 1T-PrN2 Monolayer

Abstract The quantum anomalous Hall (QAH) insulator has highly potential applications in spintronic device. However, the available candidate with tunable Chern numbers and high working temperature is quite rare. Here, we predicted 1T-PrN2 monolayer as a stable QAH insulator with high magnetic transition temperature above 600 K and tunable high Chern numbers of C = ±3 from first-principles. Without spin-orbit coupling (SOC), 1T-PrN2 monolayer is predicted as a p-state Dirac half metal(DHM) with high Fermi velocity. Rich topological phases depending on the magnetization directions can be found when the SOC is considered. The QAH effect with periodical changes of Chern number (±1) can be produced when the magnetic moment breaks all twofold rotational symmetries in the xy plane. And the critical state can be identified as Weyl half semimetals (WHSMs). When the magnetization direction is parallel to the z-axis, the system exhibits high Chern number QAH effect with C = ±3. Our work provide a new material for exploring the novel QAH effect and developing high-performance topological devices.

Synthesis and Characterization of 2D Ternary Compound TMD Materials Ta3VSe8

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are garnering considerable scientific interest, prompting discussion regarding their prospective applications in the fields of nanoelectronics and spintronics while also fueling groundbreaking discoveries in phenomena such as the fractional quantum anomalous Hall effect (FQAHE) and exciton dynamics. The abundance of binary compound TMDs, such as MX2 (M = Mo, W; X = S, Se, Te), has unlocked myriad avenues of exploration. However, the exploration of ternary compound TMDs remains relatively limited, with notable examples being Ta2NiS5 and Ta2NiSe5. In this study, we report the synthesis of a new 2D ternary compound TMD materials, Ta3VSe8, employing the chemical vapor transport (CVT) method. The as-grown bulk crystal is shiny and can be easily exfoliated. The crystal quality and structure are verified by X-ray diffraction (XRD), while the surface morphology, stoichiometric ratio, and uniformity are determined by scanning electron microscopy (SEM). Although the phonon property is found stable at different temperatures, magneto-resistivity evolves. These findings provide a possible approach for the realization and exploration of ternary compound TMDs.

A balanced quantum Hall resistor

AbstractThe quantum anomalous Hall effect in magnetic topological insulators has potential for use in quantum resistance metrology applications. Electronic conductance is quantized to e2/h (where e is the elementary charge and h is the Planck constant) due to the effect, which persists down to zero external magnetic field and is compatible with the quantum standard of voltage. However, metrological applications of the quantum anomalous Hall effect are currently restricted by the need for low measurement currents and low temperatures. Here we report a measurement scheme that increases the robustness of a zero-magnetic-field quantum anomalous Hall resistor and extends its operating range to higher currents. In the scheme, we simultaneously inject current into two disconnected perimeters of a multi-terminal Corbino device, which is based on V0.1(Bi0.2Sb0.8)1.9Te3, to balance the electrochemical potential between the edges. This screens the electric field that drives backscattering through the bulk and thus improves the stability of the quantization at increased currents. Our approach could also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.

Strain-induced high-Chern-number spin-unlocked edge states in monolayer MnAsO3 with intrinsic quantum anomalous Hall effect

Two-dimensional intrinsic magnetic topological materials that can realize device miniaturization have attracted significant attention recently based on their chiral dissipationless edge states. However, since the experimental observation of quantum anomalous Hall effect (QAHE) is still limited by low temperature, high operating temperature and large nontrivial gap are urgently needed. Here, monolayer MnAsO3 is predicted to be a room-temperature intrinsic magnetic topological material with high Chern number C = 3 based on first-principles calculations, which offers the possibility of achieving high-speed and low-energy-consumption electron transport in the future. Furthermore, the large and experimental feasible nontrivial gap up to 79.09 meV is obtained under compressive strain modulation. Moreover, the high-Chern-number topological phase transition and strain-induced spin-unlocked edge states are observed, indicating the possibility of tuning the electron transport of QAHE. All these findings suggest that monolayer MnAsO3 is a suitable and promising material for fabricating low-energy-consumption spintronics devices.

Gate-Tunable Antiferromagnetic Chern Insulator in Twisted Bilayer Transition Metal Dichalcogenides.

A series of recent experimental works on twisted MoTe_{2} homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole doping of ν=-1, and the fractional quantum anomalous Hall effect is observed at ν=-2/3 and ν=-3/5. In this Letter, we investigate the electronic properties of AA-stacked twisted bilayer MoTe_{2} at ν=-2 by k-space Hartree-Fock calculations. We identify a series of phases, among which a noteworthy phase is the antiferromagnetic Chern insulator, stabilized by an external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. Our research proposes the potential of realizing a Chern insulator beyond ν=-1, and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moiré superlattices.

Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi2 Te4.

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero-magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature TN , though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (Eg,ex ) and its spatial fluctuation in the QAH insulator 5-layer MnBi2 Te4 . Long-range fluctuations of Eg,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

Unveiling the chirality of the quantum anomalous Hall effect

Unveiling the chirality of the quantum anomalous Hall effect

On the zero-field quantization of the anomalous quantum Hall effect in two-dimensional moiré layers

On the zero-field quantization of the anomalous quantum Hall effect in two-dimensional moiré layers

Photoinduced high-Chern-number quantum anomalous Hall effect from higher-order topological insulators

Photoinduced high-Chern-number quantum anomalous Hall effect from higher-order topological insulators

Half quantized Hall effect

Here we report a half-quantized Hall effect in a metal or semimetal. The Hall conductance is half quantized and the longitudinal conductance is nonzero. Consequently, the Hall resistivity is not quantized. The half quantization occurs when the parity symmetry or time reversal symmetry emerges near the Fermi surface or Fermi level while the symmetry is broken in the whole system. A recent experiment reports the observation of the half-quantized Hall conductance in a magnetically-doped topological insulator. We discover that a single gapless Dirac cone exists in the band structure and has half-quantized conductance when the Fermi level intercepts the gapless surface states in which the parity symmetry is invariant. As there are no localized chiral edge states in the gapless and metallic system, we find that the chiral edge current is carried by the gapless surface states. The current density peaks at the edge and decays in a power law rather than the exponential decay as in the conventional quantum anomalous Hall effect. The half quantized Hall conductance is a signature of parity anomaly in a single gapless Dirac cone on a lattice. We term the nontrivial quantum phase as “parity anomalous semimetal”. The work opens the door to exploring novel topological states of matter with fractional topological invariants.

Fractional quantum anomalous Hall effect in multilayer graphene.

The fractional quantum anomalous Hall effect (FQAHE), the analogue of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking2-6. The demonstration of FQAHE could lead to non-Abelian anyons that form the basis of topological quantum computation7-9. So far, FQAHE has been observed only in twisted MoTe2 at a moiré filling factor v > 1/2 (refs. 10-13). Graphene-based moiré superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene-hBN moiré superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance [Formula: see text] at v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moiré superlattice, respectively, accompanied by clear dips in the longitudinal resistance Rxx. Rxy equals [Formula: see text] at v = 1/2 and varies linearly with v, similar to the composite Fermi liquid in the half-filled lowest Landau level at high magnetic fields14-16. By tuning the gate-displacement field D and v, we observed phase transitions from composite Fermi liquid and FQAH states to other correlated electron states. Our system provides an ideal platform for exploring charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field7-9,17-19, especially considering a lateral junction between FQAHE and superconducting regions in the same device20-22.

Magnetic and electrical properties of Co2Te3 single crystal

The Co-Te system has become a prominent field of research in recent times. CoTe2 is confirmed to be a Dirac semimetal, while Co2Te is predicted to host the quantum anomalous Hall effect. Here, we have successfully grown high-quality Co2Te3 single crystals using the solid-state reaction method and have characterized them using the energy dispersive X-ray spectroscopy, the X-ray diffraction and Laue diffraction. The X-ray rocking curve with a full-width at half-maximum of 0.067° shows Co2Te3 single crystals have good crystalline quality and mosaicity. Co2Te3 single crystals possess a hexagonal structure with the space group of P63/mmc. Resistivity measurements reveal typical metallic behavior with a transition from Non-Fermi liquid to low-temperature Landau Fermi-liquid behavior around 50 K, which can be fitted by the parallel resistance model. Magnetic measurements show no obvious anisotropy between the in-plane and out-of-plane directions with the presence of a small magnetic hysteresis at 1.8 K. Furthermore, Co2Te3 single crystals undergo a magnetic phase transition around 50 K and an antiferromagnetic transition modulated by the magnetic field below 8 K.

Maximally localized Wannier functions, interaction models, and fractional quantum anomalous Hall effect in twisted bilayer MoTe2

We investigate the moiré band structures and the strong correlation effects in twisted bilayer MoTe[Formula: see text] for a wide range of twist angles, employing a combination of various techniques. Using large-scale first-principles calculations, we pinpoint realistic continuum modeling parameters, subsequently deriving the maximally localized Wannier functions for the top three moiré bands. Simplifying our model with reasonable assumptions, we obtain a minimal two-band model, encompassing Coulomb repulsion, correlated hopping, and spin exchange. Our minimal interaction models pave the way for further exploration of the rich many-body physics in twisted MoTe[Formula: see text]. Furthermore, we explore the phase diagrams of the system through Hartree-Fock approximation and exact diagonalization (ED). Our two-band ED analysis underscores significant band-mixing effects in this system, which enlarge the optimal twist angle for fractional quantum anomalous Hall states.

Spin resolved topological bulk state in acoustics

Extremely rare topologically protected acoustic energy sink is presented in this article. Acoustic topological phenomena are generally described using quantum anomalous hall effects (QAHE), quantum valley hall effects (QVHE), and quantum spin hall effects (QSHE) where spin orbit coupling is predominant. Topological edge states are demonstrated by bulk-boundary distinction when the bulk is insulated. In this article topological acoustic conductor and its phenomena are theoretically demonstrated where the boundaries are insulated. This is exactly opposite to the behavior of a topological acoustic insulator. Phenomena presented in this article could not be explained by any of the trio Quantum Hall effects. To explain the phenomenon phononic crystals or PnCs were designed to obtain accidental triple degeneracies, resulting a Dirac-like cone at the Γ point (k→=0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\overrightarrow{k}=0$$\\end{document}). The phenomenon is microarchitecture and microrotation field independent. Here time reversal symmetry or the space inversion symmetry is not broken, and the degenerated ‘Deaf band’ dominates the local dispersion with a syncline top band. This scenario results in continuously changing ‘up spin’ and ‘down spin’ of the wave energy in the media and remain trapped without specific preferential direction of wave transport. The spin was found to generate the spin angular momentum, causing the switching in geometric phase from 0-2π\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$0-2\\pi$$\\end{document} in cyclic pattern, keeping the energy trapped inside the bulk media.

Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7

The realization of intrinsic magnetic topological insulators offers an ideal platform to investigate high-temperature quantum anomalous Hall effect as well as quantum devices. The family of MnBi2Te4(Bi2Te3)n has been confirmed that it belongs to this system. However, whether there is a bandgap in the surface states remains controversial. In this work, the ferromagnetism in Sb-doped MnBi4Te7 is confirmed by magnetic transport. Utilizing angle-resolved photoemission spectroscopy, we demonstrate the nontrivial topology in Mn(Bi0.7Sb0.3)4Te7 with an energy gap on the MnBi2Te4 termination. As well, we detect distinct topological surface states on two different terminations. Our results provide spectral evidence of an energy gap in the topological surface states.

Scanning tunneling microscopy study of epitaxial Fe3GeTe2 monolayers on Bi2Te3

Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows triangular lattices of 390 ± 10 pm for FGT and 430 ± 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 ± 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignment. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a 3 x 3R30∘ reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism measurements confirm these thin FGT films are ferromagnetic with T C ∼190 K.